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技术参数：
| | 520C | 510A |
| IN-CIRCUIT TEST | ||
| GOOD/BAD TEST | PNP and NPN transistors FET’s, SCR’s | |
| IDENTIFIES | NPN or PNP FET as N-channel or P-channel Silicone or germanium transistors transistors in LO drive, base lead in HI drive all leads of SCR | NPN or PNP FET as N-channel or P-channel FET-gate lead, all leads of |
| OUT-OF-CIRCUIT TEST | ||
| GOOD/BAD TEST | PNP and NPN transistors FET’s, SCR’s | PNP and NPN transistors FET’s |
| IDENTIFIES | NPN or PNP FET as N-channel or P-channel Silicone or germanium transistors | NPN or PNP FET as N-channel or P-channel |
| MEASURES | Reverse leakage from 0.1mA to 9mA | Does not apply |
| AUTOMATIC INDICATORS | ||
| AUDIBLE TONE | GOOD | Does not apply |
| LED | NPN or PNP, Ge or Si | NPN or PNP, Ge or Si |
| TEST SWITCH | Base or Gate for good transist or FET’s | Base or Gate for good transistor or FET’s |
| METER SCALES | Readable from 0.1μA to 9mA for Ice leakage, calibrated for silicon and germanium power and signal transistor leakage limits | Does not apply |
| APPLIED TEST CURRENTS | ||
| BASE DRIVE* | 250mA （HI）, 1mA （LO） | |
| COLLECTOR* | 125mA | |
| TEST REPETITION | 10Hz | 5Hz |
| IN-CIRCUIT SHUNT LIMIT FOR VALID GOOD/BAD TEST | ||
| RESISTANCE | >10Ω （HI）, 1.5kΩ （LO） | |
| CAPACITANCE | <15mF （HI）, 0.3mF （LO） | <25mF （HI）, 0.3μF （LO） |
| GENERAL | ||
| POWER REQUIREMENT | 9V Battery （Supplied） or optional AC adaptor | 6VDC from 4 “AA” batteries（not supplied） |
| OPERATING TEMP | 32° to 104°F （0° to 40°C）, <75% RH | |
| 顿滨惭贰狈厂滨翱狈厂（贬虫顿） | 7.5 x 4.0 x 2.0"（191 x 102 x 51 mm） | |
| WEIGHT | 1 lb. （450g） | |
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